Title :
β- and γ-radiation detectors based on GaAs with deep centres
Author :
Koretskaya, O.B. ; Okaevich, L.S. ; Potapov, A.I. ; Tolbanov, O.P.
Author_Institution :
Siberian Phys. Tech. Inst., Tomsk, Russia
Abstract :
Single and multi-element detectors for γ-radiation (Eγ>0.2 MeV) detection have been developed and investigated. Experimental results are in good agreement with calculation due to the high registration efficiency of the detector structure
Keywords :
III-V semiconductors; beta-ray detection; deep levels; gallium arsenide; gamma-ray detection; semiconductor counters; GaAs; amplitude spectrum formation; beta-radiation detectors; compensation; deep centre impurities; gamma-radiation detectors; high registration efficiency; high resistivity structures; microstrip detector; multi-element detectors; single-element detector; Attenuators; Charge carriers; Collimators; Event detection; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Gaussian distribution; Particle tracking; Spatial resolution;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768923
