Transport measurements on AlSb/InAs nanostructures

Author

Kruppa, W. ; Boos, J.B. ; Magno, R. ; Park, D. ; Bennett, B.R. ; Bass, R. ; Keye, D.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1998

fDate

11-15 May 1998

Firstpage

777

Lastpage

780

Abstract

The fabrication and characterization of AlSb/InAs nanostructures are reported. Both basic split-gate and split-gate-based quantum dot structures were examined. Considerable structure in the cryogenic conductance characteristics, including 2e²/h staircases and periodic oscillations suggestive of Coulomb blockade, were found. Conductance staircase effects were observed in the basic split-gate structure above 25 K and to about 10 mV of drain bias at 4.2 K. Single-electron tunneling phenomena, probably due to fluctuation potentials, were observed in the dot structure at 4.2 K

Keywords

Coulomb blockade; III-V semiconductors; aluminium compounds; indium compounds; nanostructured materials; semiconductor quantum dots; tunnelling; 2e²/h staircases; 4.2 K; AlSb-InAs; AlSb/InAs nanostructures; Coulomb blockade; basic split-gate structure; characterization; conductance staircase effects; cryogenic conductance characteristics; drain bias; fabrication; fluctuation potentials; periodic oscillations; single-electron tunneling phenomena; split-gate-based quantum dot structure; transport measurements; Conducting materials; Electrons; Etching; Fabrication; Gallium arsenide; Nanostructures; Quantization; Quantum dots; Split gate flash memory cells; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712778

Filename

712778