Experimental investigation of the Greek cross-shaped piezoresistive element

Author

Gridchin, V.A. ; Gridchin, A.V. ; Lubimsky, V.M. ; Besedin, V.M.

Author_Institution

Fac. of Radiotech., Electron. & Phys., Novosibirsk State Tech. Univ., Russia

fYear

1998

fDate

1998

Firstpage

113

Lastpage

118

Abstract

Theoretical investigations, which have been carried out before, show that Greek cross shaped piezoresistive elements have sensitivity equal to the Wheatstone piezoresistive bridges. For the first time, experimental investigations of Greek cross shaped piezoresistive element, fabricated on a silicon cantilever, are carried out. Load characteristics and temperature dependencies are obtained. The temperature coefficients of the output voltage, surface resistance and piezoresistivity are calculated. The electrical circuit for thermocompensation is suggested and external resistors are selected

Keywords

electric sensing devices; microsensors; piezoresistive devices; resistors; Greek cross-shaped; Si; current spread region; external resistors; load characteristics; output voltage; piezoresistive element; piezoresistivity; quasi-Hall geometry; sensitivity; silicon cantilever; surface resistance; temperature coefficients; temperature dependencies; thermocompensation circuit; Bridge circuits; Circuit topology; Physics; Piezoresistance; Piezoresistive devices; Silicon; Surface resistance; Temperature distribution; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768925

Filename

768925