Title :
New physical effects in MOS-structures
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In inversion layers on the surface of Si in MOS-structures in presence of the magnetic field parallel to the layer, the asymmetry of interactions of electrons with elementary excitations (photons, acoustic phonons, etc.) propagating in mutually opposite directions appears. The consequence of this asymmetry is that any isotropic perturbation of the electron system leads to emergence of electromotive force, which is the basis of a new class of electron transport phenomena
Keywords :
MIS structures; electron-phonon interactions; elemental semiconductors; inversion layers; silicon; surface potential; MOS-structures; Si; asymmetry of interactions; effective mass; electromotive force; electron transport phenomena; electron-phonon interactions; electron-photon interactions; inversion layers; isotropic perturbation; mutually opposite directions; parallel magnetic field; phonon drag; quasi-2D electron system; Acoustic propagation; Acoustic waves; Cyclotrons; Electrons; Hydrogen; Lorentz covariance; Magnetic fields; Phonons; Schrodinger equation; Wave functions;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768926
