Design of dual band SiGe HBT LNA with current reuse topology

Author

Lu, Z.Y. ; Xie, H.Y. ; Zhang, W.R. ; Huo, W.J. ; Guo, Z.J. ; Xing, G.H. ; Ding, C.B. ; Chen, L. ; Zhang, Y.J.

Author_Institution

Coll. of Electron. Inf. & Control Eng, Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

This paper presents a general methodology to design a LNA with current reuse topology for two standards which can operate at mobile band of 1.8GHz and WLAN band of 5.2GHz. A novel current reuse topology is proposed to reduce the power consumption and enhance the transmission gain. The input matching is achieved through serial and parallel LC circuit. Inductor degeneration in emitter is introduced to decouple the input impedance from the noise factor. The proposed LNA is designed in JAZZ SiGe HBT 0.35μm process. It achieves transmission gains of 30dB and 20dB, noise figures of 2.1dB and 1.7 dB respectively at 1.8GHz and 5.2GHz. And both S11 are below 17dB. The power consumption is 24.5mW under a power supply voltage of 3.5V.

Keywords

Ge-Si alloys; MMIC amplifiers; UHF amplifiers; bipolar MMIC; low noise amplifiers; low-power electronics; SiGe; WLAN band; bipolar MMIC; current reuse topology; dual band SiGe HBT low noise amplifiers; frequency 1.8 GHz; frequency 5.2 GHz; gain 20 dB; gain 30 dB; inductor degeneration; mobile band; noise figure 1.7 dB; noise figure 2.1 dB; parallel LC circuit; power 24.5 mW; size 0.35 mum; transmission gain; voltage 3.5 V; Dual band; Gain; Heterojunction bipolar transistors; Impedance; Inductors; Noise; Power demand; Inductor degeneration; SiGe HBT; current reuse; dual-band; low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117604

Filename

6117604