Performances of GeSnSbTe Material for High-Speed Phase Change Memory

Author

Lee, Chain-Ming ; Chao, Der-Sheng ; Chen, Yi-Chan ; Chen, Ming-Jung ; Yen, Philip H. ; Chen, Chih-Wei ; Hsu, Hong-Hui ; Wang, Wen-Han ; Chen, Wei-Su ; Chen, Fred ; Hsiao, Tsai-Chu ; Kao, Ming-Jer ; Tsai, Ming-Jinn

Author_Institution

Ind. Technol. Res. Inst., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge₂Sb₂Te₅ (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio.

Keywords

chalcogenide glasses; germanium compounds; phase change materials; random-access storage; semiconductor storage; GeSnSbTe; PCM; crystallization; device characteristics; high-speed phase change memory; higher resistance ratio; lower SET current; phase change material; semiconductor material performance; shorter SET pulse; Crystallization; Doping; Electrical resistance measurement; Nonvolatile memory; Optical pulses; Phase change materials; Phase change memory; Space vector pulse width modulation; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378936

Filename

4239504