DocumentCode :
2849383
Title :
Performances of GeSnSbTe Material for High-Speed Phase Change Memory
Author :
Lee, Chain-Ming ; Chao, Der-Sheng ; Chen, Yi-Chan ; Chen, Ming-Jung ; Yen, Philip H. ; Chen, Chih-Wei ; Hsu, Hong-Hui ; Wang, Wen-Han ; Chen, Wei-Su ; Chen, Fred ; Hsiao, Tsai-Chu ; Kao, Ming-Jer ; Tsai, Ming-Jinn
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge2Sb2Te5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio.
Keywords :
chalcogenide glasses; germanium compounds; phase change materials; random-access storage; semiconductor storage; GeSnSbTe; PCM; crystallization; device characteristics; high-speed phase change memory; higher resistance ratio; lower SET current; phase change material; semiconductor material performance; shorter SET pulse; Crystallization; Doping; Electrical resistance measurement; Nonvolatile memory; Optical pulses; Phase change materials; Phase change memory; Space vector pulse width modulation; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378936
Filename :
4239504
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2849383
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