A 2-bit/cell, Maskless, Self-Aligned Resistance Memory with High Thermal Stability

Author

Ho, ChiaHua ; Lee, Ming-Daou ; Pan, Chen-Ling ; Lai, Erh-Kun ; Yao, Yeong-Der ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Maxcronix Int. Co. Ltd., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

We report the first demonstration of a multilevel cell (MLC) resistance device using a self-aligned WO_x film prepared by plasma oxidation. The 2-bit/cell operation is achieved by applying a series of 1.5 V programming pulses. The device shows high thermal stability and good data retention. The resistance change can be attributed to variable-range hopping and Ohmic transport mechanisms. This device has the potential for future low-voltage, 3-dimensional nonvolatile memory with multiple bits per layer. In addition, no additional mask is needed to form the self-aligned device.

Keywords

electric resistance; hopping conduction; oxidation; plasma materials processing; random-access storage; thermal stability; tungsten compounds; 3-dimentional nonvolatile memory; Ohmic transport mechanism; WO; data retention; future low-voltage memory; maskless memory; multilevel cell resistance device; plasma oxidation; programming pulse series; self-aligned resistance memory; thermal stability; tungsten oxide film; variable-range hopping mechanism; voltage 1.5 V; word length 2 bit; Electrodes; Materials science and technology; Metal-insulator structures; Oxidation; Physics; Tellurium; Thermal resistance; Thermal stability; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378937

Filename

4239505