90nm Phase Change Technology with μTrench and Lance Cell Elements

Phase change memory is rapidly emerging as a promising next generation non volatile memory, offering unique capabilities for performance and functionality. Integration of the chalcogenide phase change material into a memory cell structure and memory array offers many challenges and opportunities. In this paper, the electrical properties of two possible cell structures, μTrench and Lance, will be compared using multi-megabit arrays at 90 nm. Results of the integration of PCM at 90 nm using a bipolar selector and with a cell area of 12 F² will be described, demonstrating the suitability of PCM for high density memory applications.