DocumentCode :
2849416
Title :
Phase-Change Memory Development Status
Author :
Schrott, Alejandro ; Lung, Hsiang-Lan ; Happ, Thomas ; Lam, Chung
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
This paper reviews the current development status of phase-change memory (PCM) and discusses the development road map for phase-change memory.
Keywords :
phase change materials; random-access storage; PCM; nonvolatile memory; phase-change memory; Diodes; Electrodes; FETs; Material properties; Nitrogen; Phase change materials; Phase change memory; Phase change random access memory; Roads; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378940
Filename :
4239508
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2849416
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