• DocumentCode
    2849416
  • Title

    Phase-Change Memory Development Status

  • Author

    Schrott, Alejandro ; Lung, Hsiang-Lan ; Happ, Thomas ; Lam, Chung

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper reviews the current development status of phase-change memory (PCM) and discusses the development road map for phase-change memory.
  • Keywords
    phase change materials; random-access storage; PCM; nonvolatile memory; phase-change memory; Diodes; Electrodes; FETs; Material properties; Nitrogen; Phase change materials; Phase change memory; Phase change random access memory; Roads; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378940
  • Filename
    4239508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849416