DocumentCode
2849423
Title
A novel circuit element for MOS integrated circuits
Author
Crowle, B.
Author_Institution
Integrated Photomatrix, Ltd., Dorset, England
Volume
XIII
fYear
1970
fDate
18-20 Feb. 1970
Firstpage
172
Lastpage
173
Abstract
The storage of charge on reverse-biased PN diodes in enhancement mode, P-channel MOS ICs is a particularly useful circuit feature in optoelectronic photo-sensor applications. This paper will describe a simple circuit element, analogous to the diode pump in operation, consisting of a diffused diode and MOS gate region only.
Keywords
Charge pumps; Light emitting diodes; Lighting; MOS integrated circuits; Neck; Optoelectronic and photonic sensors; Oscillators; Pulse circuits; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1970.1154819
Filename
1154819
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