Title :
The integrated pressure sensor with AlGaAs-baroresistors
Author :
Krivorotov, N.P. ; Svinolupov, Yu.G. ; Chan, A.V. ; Schegol, S.S.
Author_Institution :
Sci. Inst. of Semicond. Devices, Tomsk, Russia
Abstract :
A pressure sensor with omnidirectional pressure sensitive AlGaAs-film resistors incorporated in the Wheatstone bridge is described
Keywords :
III-V semiconductors; aluminium compounds; bridge circuits; electric sensing devices; gallium arsenide; piezoresistive devices; pressure sensors; resistors; AlGaAs; Wheatstone bridge; baroresistors; bridge balancing; integrated pressure sensor; omnidirectional pressure sensitivity; pressure gauge; Biomembranes; Ceramics; Contacts; Electric resistance; Gallium arsenide; Immune system; Piezoresistive devices; Resistors; Temperature distribution; Temperature sensors;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768933
