Title :
Toggle MRAM: A highly-reliable Non-Volatile Memory
Author :
Durlam, M. ; Craigo, B. ; DeHerrera, M. ; Engel, B.N. ; Grynkewich, G. ; Huang, B. ; Janesky, J. ; Martin, M. ; Martino, B. ; Salter, J. ; Slaughter, J.M. ; Wise, L. ; Tehrani, S.
Author_Institution :
Freescale Semicond, Inc., Chandler
Abstract :
Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. The first commercially available MRAM product, Freescale´s 4Mb MR2A16A Toggle MRAM, was released for production in 2006 and is now in volume production. In this paper we provide an overview of Freescale´s MRAM technology and describe the performance and reliability attributes of the MR2A16A.
Keywords :
CMOS memory circuits; circuit reliability; magnetic tunnelling; magnetoresistive devices; random-access storage; MR2A16A toggle MRAM; attribute reliability; highly-reliable nonvolatile memory; magnetic tunnel junction devices; magnetoresistive random access memory; standard CMOS; storage capacity 4 Mbit; CMOS technology; Circuits; Electrons; Magnetic flux; Magnetic semiconductors; Magnetic tunneling; Nonvolatile memory; Oxidation; Tunneling magnetoresistance; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378942
