Toggle MRAM: A highly-reliable Non-Volatile Memory

Author

Durlam, M. ; Craigo, B. ; DeHerrera, M. ; Engel, B.N. ; Grynkewich, G. ; Huang, B. ; Janesky, J. ; Martin, M. ; Martino, B. ; Salter, J. ; Slaughter, J.M. ; Wise, L. ; Tehrani, S.

Author_Institution

Freescale Semicond, Inc., Chandler

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. The first commercially available MRAM product, Freescale´s 4Mb MR2A16A Toggle MRAM, was released for production in 2006 and is now in volume production. In this paper we provide an overview of Freescale´s MRAM technology and describe the performance and reliability attributes of the MR2A16A.

Keywords

CMOS memory circuits; circuit reliability; magnetic tunnelling; magnetoresistive devices; random-access storage; MR2A16A toggle MRAM; attribute reliability; highly-reliable nonvolatile memory; magnetic tunnel junction devices; magnetoresistive random access memory; standard CMOS; storage capacity 4 Mbit; CMOS technology; Circuits; Electrons; Magnetic flux; Magnetic semiconductors; Magnetic tunneling; Nonvolatile memory; Oxidation; Tunneling magnetoresistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378942

Filename

4239510