• DocumentCode
    2849466
  • Title

    Trapping effects in MOS photosensing arrays

  • Author

    Declercq, Michel ; Jespers, P.

  • Author_Institution
    Catholic University of Louvain, Heverlee, Belgium
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    170
  • Lastpage
    171
  • Abstract
    Switching photsensing diodes of an array by MOS transistors may cause severe losses of charges into the substrate, due to trapping in the oxide. The effect can be minimized by carefully selecting driving points of the MOST.
  • Keywords
    Diodes; Inspection; Leakage current; MOSFETs; Photodiodes; Substrates; Switches; Temperature sensors; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154822
  • Filename
    1154822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849466