Title :
High Mobility Channel Materials for Future CMOS
Author :
Saraswat, Krishna C.
Author_Institution :
Stanford Univ., Stanford
Abstract :
Channel materials with high mobility will be needed for future technology nodes . In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si.
Keywords :
III-V semiconductors; MOSFET; carrier mobility; elemental semiconductors; gallium arsenide; germanium; indium compounds; silicon; CMOS; GaAs; Ge; InAs; InSb; MOSFET; Si; high-mobility channel materials; Annealing; CMOS technology; Gallium arsenide; Hydrogen; Lattices; MOSFETs; Passivation; Rough surfaces; Surface morphology; Surface roughness;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378944
