Fabrication and Characterization of Poly-Si Nanowire Devices with Performance Enhancement Techniques

Field-effect transistors (FETs) with nanowire (NW) channels have recently attracted enormous attention for a number of applications, such as NW TFTs. Three approaches to enhance NW device performance are implemented. By utilizing techniques of passivation treatment and crystallinity improvement, superior electrical characteristics are achieved. It is concluded that this approach presents several advantages including very simple fabrication flow, low cost, reliable S/D contacts, and precise positioning and alignment of the NWs.