Fabrication and Characterization of Poly-Si Nanowire Devices with Performance Enhancement Techniques

Author

Su, Chun-Jung ; Lin, Horng-Chih ; Tsai, Hsien-Hung ; Huang, Tiao-Yuan ; Ni, Wei-Xin

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

Field-effect transistors (FETs) with nanowire (NW) channels have recently attracted enormous attention for a number of applications, such as NW TFTs. Three approaches to enhance NW device performance are implemented. By utilizing techniques of passivation treatment and crystallinity improvement, superior electrical characteristics are achieved. It is concluded that this approach presents several advantages including very simple fabrication flow, low cost, reliable S/D contacts, and precise positioning and alignment of the NWs.

Keywords

field effect transistors; nanoelectronics; nanowires; passivation; silicon; Si; crystallinity improvement; electrical characteristics; field-effect transistors; nanowire TFT; nanowire channels; passivation treatment; performance enhancement techniques; poly-silicon nanowire devices; Biosensors; Crystallization; FETs; Fabrication; Grain size; Laboratories; Nanobioscience; Nanoscale devices; Surface treatment; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378945

Filename

4239513