DocumentCode :
2849530
Title :
WetFET A Novel Fluidic Gate-Dielectric Transistor for Sensor Applications
Author :
Lee, Donovan ; Sun, Xin ; Quevy, Emmanuel ; Howe, Roger T. ; Liu, Tsu-Jae King
Author_Institution :
Univ. of California at Berkeley, Berkeley
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
In this work, we investigate the characteristics of a MOSFET with a hybrid solid/liquid gate-dielectric structure, which can be used for fluidic sensor applications. This "WetFET" device is made using a standard MOSFET fabrication process with additional steps to selectively remove portions of the gate dielectric and to subsequently refill the resultant gaps with liquid. Characteristics of the first prototype WetFET device are presented and analyzed with the aid of device simulations. It is concluded that as transistor performance is highly sensitive to the gate dielectric properties, this structure is promising for creating new, efficient sensors.
Keywords :
MOSFET; dielectric materials; electric sensing devices; fluidic devices; semiconductor device testing; MOSFET fabrication process; WetFET; device simulation; fluidic gate-dielectric transistor; fluidic sensor; Application software; Biosensors; Contamination; Degradation; Dielectric measurements; Fabrication; MOSFET circuits; Permittivity; Pollution measurement; Water pollution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378947
Filename :
4239515
Link To Document :
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