Title :
A 100-MHz — 5.0-GHz active balun using 0.18-µm CMOS process
Author :
Zhang, Lu ; Chen, Chao ; Wu, Jianhui
Author_Institution :
Nat. ASIC Res. Center, Southeast Univ., Nanjing, China
Abstract :
A 100-MHz to 5.0-GHz broadband active balun using 0.18-μm CMOS process is presented in this paper. This active balun is made up of a current reusing common-drain and common-source stage and a differential stage. Because of the symmetrical architecture and identical parameters of the four PMOS transistors, the transconductances and output resistances of the common-drain and the common-source amplifiers are the same. Power consumption decreases through current reuse, and the final output amplitude and phase imbalance improves. Besides, a PMOS feedback is used to compensate the leakage of the common-drain amplifier to mitigate amplitude and phase imbalances. The simulated results show that from 100 MHz to 5.75 GHz, the two differential outputs can provide gain between +6.5 dB and 0 dB with less than 0.2-dB amplitude imbalances. Phase difference keeps an ideal 180-degree value below 4 GHz, and within just 6 degrees deviation till 5.0 GHz. And it consumes merely 1.4 mW from 1.2 V supply.
Keywords :
CMOS integrated circuits; MMIC amplifiers; UHF amplifiers; VHF amplifiers; active networks; baluns; wideband amplifiers; CMOS process; PMOS feedback; broadband active balun; common-drain amplifiers; common-source amplifiers; frequency 100 MHz to 5.0 GHz; size 0.18 mum; CMOS process; Capacitors; Differential amplifiers; Gain; Impedance matching; Inductors; Microwave integrated circuits; Active balun; amplitude mismatch; current reuse; phase difference; symmetrical schematic;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117614