A low-noise HV interface circuit for MEMS vibratory gyroscope

Author

Tao, Tingting ; Lu, Wengao ; Fang, Ran ; Zhang, Yacong ; Chen, Zhongjian

Author_Institution

Dept. of Microelectron., Peking Univ., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The paper presents a low-noise high voltage (HV) CMOS Interface ASIC designed for MEMS vibratory gyroscopes. A closed-loop control is realized in the driving mode. An in-chip level shifter is designed in the loop to achieve a high DC voltage level of 5V which can excite the gyroscope. A DC biasing method is adopted in the interface circuit to convert the amplitude-modulated capacitive signal into voltage. The chip occupies 2.5 × 2.0 mm² in a 0.35 μm 2P3M BCD HV process, which offers buried layer and high voltage N-well isolation to block out the potential coupling noise. Simulation results show that the drive axis can accomplish a closed-loop self-oscillation of the MEMS gyroscope.

Keywords

CMOS integrated circuits; amplitude modulation; application specific integrated circuits; buried layers; capacitive sensors; detector circuits; gyroscopes; microsensors; 2P3M BCD HV process; ASIC; MEMS vibratory gyroscope; amplitude modulated capacitive signal; buried layer; closed loop control; driving mode; high voltage CMOS Interface; high voltage N-well isolation; in chip level shifter; low noise interface circuit; size 0.35 mum; voltage 5 V; Application specific integrated circuits; CMOS integrated circuits; Capacitors; Gyroscopes; Integrated circuit modeling; Micromechanical devices; Noise; Capacitance Detection; High Voltage; Micro-machined Gyroscope; Self Oscillation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117616

Filename

6117616