• DocumentCode
    2849569
  • Title

    Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime

  • Author

    Yang, Y.-J. ; Chang, S.T. ; Liu, C.W.

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The optimal combinations of strain and channel on different substrate orientations for Ge NMOSFETs are reported. Applying biaxial tensile stress on (111) wafer with [-110] channel direction can reach highest mobility value (4.1x) and largest ballistic saturation current (2.6x). For both tensile and compressive strain, the mobility and Jsat enhancement can be found for all substrate orientations if strain condition and channel direction are optimized.
  • Keywords
    MOSFET; electron mobility; elemental semiconductors; germanium; Ge; biaxial tensile stress; electron mobility enhancement; strain engineering; strained-Ge NMOSFET; Acoustic scattering; Capacitive sensors; Compressive stress; Effective mass; Electron mobility; MOSFETs; Optical scattering; Quantization; Tensile strain; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378950
  • Filename
    4239518
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849569