Title :
A compact threshold voltage model for the novel high-speed semiconductor device IMOS
Author :
Li, Yuchen ; Zhang, Heming ; Hu, Huiyong ; Xu, Xiaobo ; Zhou, Chunyu ; Wang, Bin
Author_Institution :
Key Lab. for Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
IMOS allows very sharp subthreshold slopes, down to a few mV/dec. A threshold voltage model is proposed in different distribution of surface electric field and in the condition of avalanche breakdown. Model verification is carried out using ISE. Good agreement is obtained between the model´s calculations and the simulated results.
Keywords :
MOSFET; avalanche breakdown; electric fields; semiconductor device breakdown; semiconductor device models; IMOS; ISE; avalanche breakdown; compact threshold voltage model; high-speed semiconductor device; model verification; subthreshold slopes; surface electric field distribution; Analytical models; Avalanche breakdown; Electric fields; Films; Logic gates; Mathematical model; Threshold voltage; IMOS; avalanche breakdown; subthreshold swing; threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117617
