Title :
Proposal of 3-Dimensional Independent Triple-Gate MOS Transistor with Dynamic Current Control
Author :
Okuyama, Kiyoshi ; Yoshikawa, Koji ; Sunami, Hideo
Author_Institution :
Hiroshima Univ., Hiroshima
Abstract :
A three-dimensional nMOSFET with independent parallel triple gates on an SOI beam is successfully developed. Since this FET can provide independent biasing to each gate, both subthreshold behavior and drivability can be flexibly controlled in response to performance requirement. Furthermore, its self-aligned structure provides planar area shrinkage to certain extent.
Keywords :
MOSFET; silicon-on-insulator; 3-dimensional independent triple-gate MOS transistor; SOI beam; dynamic current control; nMOSFET; parallel triple gates; Current control; Electric variables control; Electrodes; Etching; FETs; Lead compounds; MOSFET circuits; Oxidation; Proposals; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378951
