High speed silicon-on-sapphire 50-stage shift register

developed and have resulted in the successful realization of hlgh performance silicon-on-sapphire shift-register arrays. Features of the array are clocked operation from 300 kHz to 75 MHz over 50 stages. A complementary MOS process sequence utilized in the array fabrication resulted in yields as high as 50% and produced high-quality complementary devices wit11 field-effect mobilities of 320 and 160 cm´/V-s for electrons and holes, respectively. The drastic reduction of parasitic capacitance inherent in SOS technology combined witn these device characteristics was found to provide circuits, while retaining all of the other desirable characteristics.