• DocumentCode
    2849617
  • Title

    Enhanced Carrier Transport in Strained Bulk N-MOSFETs with Silicon-Carbon Source/Drain Stressors

  • Author

    Ang, Kah-Wee ; Chui, King-Jien ; Tung, Chih-Hang ; Samudra, Ganesh ; Balasubramanian, N. ; Yeo, Yee-Chia

  • Author_Institution
    Nat. Univ. of Singapore, Singapore
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the demonstration of strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain (S/D) stressors for enhanced drive current Ion performance. At a fixed DIBL of 0.15 V/V, n-FETs with (Si1-yCy) S/D demonstrate a significant Ion improvement of 30% over the unstrained control n-FETs. This improvement is attributed to the carrier mobility gain as a result of the lateral tensile strain and vertical compressive strain in the transistor channel.
  • Keywords
    MOSFET; carbon; silicon; stress effects; bulk N-MOSFET; carrier mobility gain; enhanced carrier transport; lateral tensile strain; n-FET; n-channel transistor; silicon-carbon source/drain stressors; transistor channel; Capacitive sensors; Electron mobility; Epitaxial growth; Etching; Fabrication; Lattices; MOSFET circuits; Strain control; Tensile strain; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378954
  • Filename
    4239522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849617