Title :
A 3.1–10.6 GHz ultra-wideband 0.18-µm CMOS low-noise amplifier with micromachined inductors
Author :
Wang, To-Po ; Chiang, Shih-Hua
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
A 3.1-10.6 GHz ultra-wideband (UWB) 0.18-μm CMOS low-noise amplifier using micromachined inductors is proposed in this paper. This LNA consists of two stages, the first stage is the cascode topology with shunt-series feedback for bandwidth enhancement, and the second stage is the common-source topology with shunt-series feedback for further bandwidth extended. To improve LNA performance in terms of gain and NF, the CMOS compatible micromachined inductors are adopted in this work. By using these techniques, this LNA achieves the 3-dB bandwidth from 3.1-10.6 GHz, and the peak gain is 19 dB. The dc power consumption and lowest noise figure of this LNA is 14.3 mW and 2.4 dB, respectively.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; inductors; low noise amplifiers; micromachining; ultra wideband technology; MMIC amplifiers; bandwidth enhancement; cascode topology; common-source topology; frequency 3.1 GHz to 10.6 GHz; gain 19 dB; micromachined inductors; noise figure 2.4 dB; power 14.3 mW; shunt-series feedback; size 0.18 mum; ultra-wideband CMOS low-noise amplifier; Bandwidth; CMOS integrated circuits; Gain; Inductors; Low-noise amplifiers; Micromechanical devices; Noise figure; Low-Noise Amplifier (LNA); micromachined inductors; ultra-wide band (UWB);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117619
