DocumentCode :
2849631
Title :
GaAs and InP nano-hole arrays fabricated by reactive beam etching using highly ordered alumina membranes
Author :
Nakao, M. ; Oku, S. ; Tamamura, T. ; Yasui, K. ; Masuda, H.
Author_Institution :
NTT Opto-Electron. Labs., Atsugi, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
781
Lastpage :
784
Abstract :
Highly ordered nano-channel arrays consisting of an anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nano-channel pattern into III-V semiconductors. The alumina mask shows high tolerance to RBE using Br2/N2 mixed gas system. GaAs and InP nano-hole arrays with high aspect ratio were obtained
Keywords :
III-V semiconductors; alumina; arrays; gallium arsenide; indium compounds; masks; membranes; nanostructured materials; sputter etching; Br2/N2 mixed gas system; GaAs; III-V semiconductors; InP; RBE; high aspect ratio; highly ordered alumina membranes; highly ordered nano-channel arrays; mask; nano-hole arrays; reactive beam etching; Aluminum; Atomic force microscopy; Biomembranes; Etching; Gallium arsenide; Indium phosphide; Oxidation; Photonic crystals; Scanning electron microscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712780
Filename :
712780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2849631
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