DocumentCode :
2849640
Title :
Channel formation in an IGFET and its equivalent circuit for CAD
Author :
Goser, K.
Author_Institution :
Siemens AG, Munich, Germany
Volume :
XIII
fYear :
1970
fDate :
18-20 Feb. 1970
Firstpage :
98
Lastpage :
99
Abstract :
An equivalent circuit for IGFETs displaying intrinsic cutoff frequencies can be derived from a physical model to describe the formation and disappearance of the channel. Circuit may be useful in analysis of microwave circuits with IGFETs and in the simulation of ICs where transistors with long channels or substrates with high doping levels are used.
Keywords :
Circuit simulation; Cutoff frequency; Electrons; Equations; Equivalent circuits; Insulation; MOSFETs; Parasitic capacitance; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1970.1154836
Filename :
1154836
Link To Document :
بازگشت