Title :
Channel formation in an IGFET and its equivalent circuit for CAD
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
An equivalent circuit for IGFETs displaying intrinsic cutoff frequencies can be derived from a physical model to describe the formation and disappearance of the channel. Circuit may be useful in analysis of microwave circuits with IGFETs and in the simulation of ICs where transistors with long channels or substrates with high doping levels are used.
Keywords :
Circuit simulation; Cutoff frequency; Electrons; Equations; Equivalent circuits; Insulation; MOSFETs; Parasitic capacitance; Switching circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154836