Title :
EIDAP: A new broadband high-power UHF and microwave power transistor structure
Author :
Goordman, R. ; Petersen, Ian ; Boll, H. ; Bertram, W.
Author_Institution :
Bell Telephone Labs., Inc., Murray Hill, NJ, USA
Abstract :
This paper will describe a composite power transistor, using a new technique for reducing lead inductance, that is capable of 17-W saturated and 11-W linear output, dc-500 MHz, with a gain-bandwidth product of 2.5 GHz.
Keywords :
Broadband amplifiers; Coupling circuits; Encapsulation; Feedback; Frequency; Impedance; Inductance; Parasitic capacitance; Power transistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154837
