DocumentCode :
2849667
Title :
To Analyze the Plasma Chambers Characteristics by 1/k Value Deduced From RF Parameters Collected by Impedance Meter
Author :
Chang, Kuo-Yen ; Leou, Keh-Chyang
Author_Institution :
ProMOS Technol. Incorporation, Hsinchu
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
The RF impedance meter is one of in-situ, noninvasive techniques to monitor the status of RF power delivery, and to derive the electrical property in the plasma chamber. This study proposes a measurement, 1/k value, which carry some plasma characteristics such as ion current and its evolution during process. This measurement can be applied to MERIE tools or ICP tools. It is shown that the statistic of electrical quantities, said sheath resistance |Zsh|/cosPhish and sheath voltage Vsh, in a MERIE plasma is similar to that of the ICP sheath model proposed by Sobolewski. It might serve as an index among several homogeneous chambers, or measurement of stability for individual chamber during a long time of observation.
Keywords :
plasma diagnostics; plasma properties; plasma sheaths; sputter etching; 1/k value; ICP tools; MERIE plasma; MERIE tools; RF impedance meter; RF parameters; RF power delivery monitoring techniques; homogeneous chambers; ion current; plasma chambers characteristics; sheath resistance; sheath voltage; stability measurement; Current measurement; Electrical resistance measurement; Impedance; Monitoring; Noninvasive treatment; Plasma measurements; Plasma properties; Plasma sheaths; Radio frequency; Statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378958
Filename :
4239526
Link To Document :
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