Barriermetal-less interconnect with low-k organic film

Author

Maeda, Nobuhide ; Takimoto, Yoshio ; Sakamoto, Yoshinori ; Tada, Masahiro ; Nakajima, Michio ; Funatsu, Keisuke

Author_Institution

Consortium for Adv. Semicond. Mater. & Related Technol., Tokyo

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

Barrier-free interconnect with low-k (2.65) organic dielectric, polybenzoxazole (PBO), was investigated. Leak current and RC product of barrier-free interconnect are lower than those of conventional structure. TDDB lifetime of barrier-free interconnect is longer than that of conventional one. Barrier-free via-chain was successfully constructed. In summary, PBO might be a strong candidate for ILD of barrier-free interconnects in terms of process compatibility and electrical reliability.

Keywords

integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; leakage currents; polymer films; TDDB lifetime; barriermetal-less interconnect; electrical reliability; leak current; low-k organic film; polybenzoxazole; process compatibility; Capacitance; Conducting materials; Conductive films; Current measurement; Dielectric materials; Electrical resistance measurement; Electrodes; Inorganic materials; Organic materials; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378959

Filename

4239527