Title :
Barriermetal-less interconnect with low-k organic film
Author :
Maeda, Nobuhide ; Takimoto, Yoshio ; Sakamoto, Yoshinori ; Tada, Masahiro ; Nakajima, Michio ; Funatsu, Keisuke
Author_Institution :
Consortium for Adv. Semicond. Mater. & Related Technol., Tokyo
Abstract :
Barrier-free interconnect with low-k (2.65) organic dielectric, polybenzoxazole (PBO), was investigated. Leak current and RC product of barrier-free interconnect are lower than those of conventional structure. TDDB lifetime of barrier-free interconnect is longer than that of conventional one. Barrier-free via-chain was successfully constructed. In summary, PBO might be a strong candidate for ILD of barrier-free interconnects in terms of process compatibility and electrical reliability.
Keywords :
integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; leakage currents; polymer films; TDDB lifetime; barriermetal-less interconnect; electrical reliability; leak current; low-k organic film; polybenzoxazole; process compatibility; Capacitance; Conducting materials; Conductive films; Current measurement; Dielectric materials; Electrical resistance measurement; Electrodes; Inorganic materials; Organic materials; Testing;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378959
