Title :
Accurate Modeling and Characterization of Mobility in Tensile and Compressive Stress for State-of-the-Art Manufacturing NMOSFETS
Author :
Wang, J.-S. ; Chen, William P N ; Shih, C.-H. ; Lien, C. ; Su, Pin ; Sheu, Yeuan-Ming ; Chao, Donald Y S ; Goto, K.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
A novel mobility model and its characterization technique were presented for manufacturing strained-Si NMOSFETs. The mobility terms in Matthiessen´s form can be precisely decoupled to investigate Coulomb scattering effect for different stress conditions. Stress devices suffered serious Coulomb scattering at high vertical field, however, tensile stress NMOSFET exhibits better mobility enhancement than compressive counterpart due to less Coulomb scattering.
Keywords :
MOSFET; carrier mobility; compressive testing; elemental semiconductors; semiconductor device manufacture; semiconductor device models; semiconductor device testing; silicon; stress analysis; tensile testing; Coulomb scattering effect; Matthiessen´s form terms; Si; compressive stress; mobility characterization technique; mobility enhancement; mobility model; state-of-the-art strained-Si NMOSFET manufacturing; tensile stress; Compressive stress; Degradation; MOSFETs; Parasitic capacitance; Performance evaluation; Piezoresistance; Scattering; Semiconductor device manufacture; Tensile stress; Virtual manufacturing;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378964
