Investigation of Scaling for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson´s Equation

Introduction Due to its better gate control, multi-gate structure is an important candidate for CMOS scaling. Dependent on the aspect ratio, FinFET and Tri-gate are two main options in the multi-gate device design. For 45nm technology, Tri-gate was suggested by [1] as a more scalable structure than FinFET. Nevertheless, the study in [2] indicated that Tri-gate transistors are not feasible when lightly doped body [3] is adopted. Whether Tri-gate is suitable for future scaling merits further examination. In this work, we investigate the scalability of multi-gate MOSFETs using the solution of 3-D Poisson´s equation.