Title :
An 1.2 V 8-bit 1-MS/s single-input res-cap segment SAR ADC for temperature sensor in LTE
Author :
Wu, Haijun ; Li, Bin ; Zou, Minhan ; Huang, Weichao ; Wang, Yongping
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
An 8-bit single-input successive approximation register (SAR) analog-to-digital converter (ADC) for long term evolution (LTE) system with an internal ring oscillator is implemented. A novel 5-bit resistor and 3-bit capacitor segment digital-to-analog converter (DAC) is used to minimize the chip area. The design was fabricated in a 0.13 μm CMOS process with an area of 0.1mm2 and a power of 1.2 mW. The measurement results show that the DNL and INL of the proposed ADC are +0.11/-0.18 LSB and +0.8/-0.04 LSB respectively. The SFDR and SNDR can get 53 dB and 43.3 dB respectively.
Keywords :
CMOS integrated circuits; Long Term Evolution; analogue-digital conversion; temperature sensors; CMOS process; LTE; internal ring oscillator; long term evolution system; power 1.2 mW; single-input res-cap segment SAR ADC; size 0.13 mum; successive approximation register analog-to-digital converter; temperature sensor; voltage 1.2 V; Arrays; CMOS process; Capacitors; Resistors; Ring oscillators; Semiconductor device measurement; Temperature sensors; LTE; SAR ADC; switched capacitor transceiver;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117629
