Title :
Advanced CMOS Technology beyond 45nm Node
Author :
Kawanaka, Shigeru ; Hokazono, Akira ; Yasutake, Nobuaki ; Tatsumura, Kosuke ; Koyama, Masato ; Toyoshima, Yoshiaki
Author_Institution :
Center for Semicond. Res. & Dev., Yokohama
Abstract :
At the time of CMOS device development in 45 nm node, newly developed materials and techniques have been discussed and experimented to achieve power-performance requirement. Based on the published reports, the overview of current 45 nm node technology development status is summarized. Then, the prevision of 32 nm node device design strategy is discussed considering key technologies such as stress enhancement technique, metal high-k gate stack and non-classical device scaling both for structure and temperature.
Keywords :
CMOS logic circuits; Ge-Si alloys; carrier mobility; dielectric materials; high-k dielectric thin films; integrated circuit technology; large scale integration; stress analysis; CMOS device development; CMOS technology; LSI; Si-Ge; logic CMOS device; metal high-k gate stack scaling; node technology development status; nonclassical device scaling; power-performance requirement; size 45 nm; stress enhancement technique; CMOS technology; Compressive stress; Geometry; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Insulation; Large scale integration; Silicon germanium; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378967