• DocumentCode
    2849832
  • Title

    35nm SOI-CMOS for Sub-Ambient Temperature Operation

  • Author

    Cai, Jin ; Frank, David J. ; Yin, Haizhou ; Dennard, Robert H. ; Haensch, Wilfried E.

  • Author_Institution
    IBM, Yorktown Heights
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate over 40% CMOS performance gain with minimal process changes by lowering the operating temperature from 100degC to -50degC. For the same performance, the lower temperature operation delivers a 60% reduction in power-delay product at a reduced supply voltage. Coupled with recent advances in liquid cooling techniques, our results suggest that sub-ambient temperature operation is an attractive option for high performance and energy-efficient CMOS.
  • Keywords
    MOSFET; semiconductor device testing; silicon-on-insulator; NFET; PFET; SOI-CMOS; liquid cooling techniques; power-delay product; sub-ambient temperature operation; voltage scaling barrier; CMOS technology; Coolants; Electric resistance; Energy efficiency; Immune system; Performance gain; Stress; System performance; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378969
  • Filename
    4239537