Title :
Utilizing low forward voltage drop power semiconductors to minimize heat sinking requirements in multichip module DC solid state relays and static switching applications
Author :
Mays, L. ; Kime, K.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
This paper provides a concise overview of the impact of new ultra low RDS(on) MOSFET technology, low Vf Schottky technology, and low Vce(on) bipolar technology devices as applied to control of low voltage DC power. Device selection criteria and circuit topologies are provided along with empirical and FEA modeling data on heat sinking and power dissipation
Keywords :
Schottky diodes; finite element analysis; heat sinks; multichip modules; network topology; power MOSFET; power bipolar transistors; power semiconductor diodes; semiconductor device models; semiconductor device packaging; semiconductor relays; FEA modeling; MOSFET technology; Schottky diodes; Schottky technology; bipolar technology devices; circuit topologies; device selection criteria; heat sinking; heat sinking minimization; low forward voltage drop power semiconductors; low voltage DC power control; multichip module DC solid state relays; multichip module DC static switching applications; power dissipation; Batteries; Heat sinks; Low voltage; MOSFET circuits; Multichip modules; Packaging; Power semiconductor switches; Relays; Solid state circuits; Switching circuits;
Conference_Titel :
Multichip Modules and High Density Packaging, 1998. Proceedings. 1998 International Conference on
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-4850-8
DOI :
10.1109/ICMCM.1998.670770
