Title :
Optimization of the MuGFET performance on Super Critical-Strained SOI (SC-SSOI) substrates featuring raised source/drain and dual CESL
Author :
Collaert, N. ; Rooyackers, R. ; Dilliway, G. ; Iyengar, V. ; Augendre, E. ; Leys, F. ; Cayrefourq, I. ; Ghyselen, B. ; Loo, R. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
IMEC, Leuven
Abstract :
In this paper, we investigate for the first time the impact of raised source/drain on the short channel current enhancement of MuGFET devices on super critical strained SSOI (SC-SSOI). Short channel nMOS drive current can be improved up to 15% and even 50% in the case of high tensile 30 nm SSOI substrates. We also show that SC-SSOI has a higher sensitivity to the mobility boost from tensile contact etch stop layers (CESL). Therefore the combination of both mobility boosters is very beneficial for nMOS MuGFET when used with SEG.
Keywords :
MOSFET; carrier mobility; silicon-on-insulator; Si-Jk; carrier mobility boosters; nMOS MuGFET devices; raised source-drain; short channel nmos drive current; super critical-strained SOI substrates; tensile contact etch stop layers; Charge carrier processes; Compressive stress; Electron mobility; Epitaxial growth; Etching; FinFETs; MOS devices; Substrates; Tensile strain; Tensile stress;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378972