DocumentCode
2849902
Title
Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source
Author
Guo, Hui ; Shi, Yanqiang ; Zhang, Yuming ; Zhang, Yujuan ; Han, Jisheng
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´´an, China
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
1
Lastpage
2
Abstract
A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
Keywords
p-i-n diodes; p-n junctions; photovoltaic cells; silicon compounds; wide band gap semiconductors; SiC; fill factor; high open-circuit voltage betavoltaic cell; irradiation source; p-i-n betavoltaic cell fabrication; pin homojunction; power density; voltage 0.98 V; wide band gap semiconductor betavoltaic cell; Batteries; Gallium nitride; Photonic band gap; Radiation effects; Schottky diodes; Silicon carbide; Wide band gap semiconductors; Betavoltaic; micro nuclear batteries; p-i-n diode; silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location
Tianjin
ISSN
Pending
Print_ISBN
978-1-4577-1998-1
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/EDSSC.2011.6117636
Filename
6117636
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