• DocumentCode
    2849910
  • Title

    Channel current enhancement by back-gate biasing in ultrathin SOI-MOSFETs with thin BOX

  • Author

    Ohata, A. ; Bae, Y. ; Fenouillet-Beranger, C. ; Cristoloveanu, S.

  • Author_Institution
    Osaka City Univ., Osaka, Japan
  • fYear
    2011
  • fDate
    17-18 Nov. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Electron mobility and hole mobility in ultrathin SOI-MOSFETs with thin (10 nm and 25 nm) buried oxide (BOX) were studied. We confirmed that the thin BOX did not deteriorate the mobility. We also confirmed a large channel current enhancement by back-gate biasing in P-channel SOI-MOSFETs for both long and short channels.
  • Keywords
    MOSFET; electron mobility; hole mobility; silicon-on-insulator; back-gate biasing; channel current enhancement; electron mobility; hole mobility; thin BOX; thin buried oxide; ultrathin SOI-MOSFET; MOSFET; Mobility; SOI; Thin buried oxide; Ultrathin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
  • Conference_Location
    Tianjin
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1998-1
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/EDSSC.2011.6117637
  • Filename
    6117637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849910