Title :
Channel current enhancement by back-gate biasing in ultrathin SOI-MOSFETs with thin BOX
Author :
Ohata, A. ; Bae, Y. ; Fenouillet-Beranger, C. ; Cristoloveanu, S.
Author_Institution :
Osaka City Univ., Osaka, Japan
Abstract :
Electron mobility and hole mobility in ultrathin SOI-MOSFETs with thin (10 nm and 25 nm) buried oxide (BOX) were studied. We confirmed that the thin BOX did not deteriorate the mobility. We also confirmed a large channel current enhancement by back-gate biasing in P-channel SOI-MOSFETs for both long and short channels.
Keywords :
MOSFET; electron mobility; hole mobility; silicon-on-insulator; back-gate biasing; channel current enhancement; electron mobility; hole mobility; thin BOX; thin buried oxide; ultrathin SOI-MOSFET; MOSFET; Mobility; SOI; Thin buried oxide; Ultrathin;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117637
