DocumentCode :
2849956
Title :
Design and performance of the GaAs FET
Author :
Bechtel, N. ; Hooper, W. ; Hower, P.
Author_Institution :
Fairchild Semiconductor, Palo Alto, CA, USA
Volume :
XIII
fYear :
1970
fDate :
18-20 Feb. 1970
Firstpage :
50
Lastpage :
51
Abstract :
A GaAs field-effect transistor that exhibits a unilateral gain of 17 dB at 2 GHz and an 
of greater than 12 GHz has been developed. Device employs an epitaxial N-type channel deposited on a semi-insulating GaAs substrate with a Schottky barrier gate.
of greater than 12 GHz has been developed. Device employs an epitaxial N-type channel deposited on a semi-insulating GaAs substrate with a Schottky barrier gate.Keywords :
Circuits; Doping; Electron mobility; FETs; Frequency; Gallium arsenide; Geometry; Schottky barriers; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1970.1154856
Filename :
1154856
Link To Document :
