Title :
Over 1-Tbit/s demultiplexing using low-temperature-grown InGaAs/InAlAs multiple quantum wells
Author :
Kobayashi, H. ; Takahashi, R. ; Matsuoka, Y. ; Iwamura, H.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Optical switching/sampling modules operating in the 1.55 μm band were developed using ultrafast all-optical AND gates made with low-temperature grown InGaAs/InAlAs multiple quantum wells. The modules achieved a response time of 390 fs with a contrast ratio of 25 in a fiber-based experiment. Using the modules, we demonstrated all-optical demultiplexing for signal pulses corresponding to 1.05 Tbit/s and we clearly detected the demultiplexed optical signals
Keywords :
III-V semiconductors; aluminium compounds; demultiplexing; electro-optical switches; gallium arsenide; indium compounds; logic gates; quantum well devices; semiconductor growth; semiconductor quantum wells; 390 fs; InGaAs-InAlAs; all-optical demultiplexing; low-temperature-grown InGaAs/InAlAs multiple quantum wells; optical switching/sampling modules; over 1-Tbit/s demultiplexing; ultrafast all-optical AND gates; Absorption; Demultiplexing; Distributed Bragg reflectors; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical pumping; Optical saturation; Quantum well devices; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712793
