Title :
Studies on I-V performance enhancements of ZnO thin film transistors by vacuum treatments below 300°C
Author :
Li, Yong-Qi ; Sun, Lei ; Liu, Xiao-Yan ; Wang, Yi ; Han, De-dong
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Bottom gate ZnO-TFTs are fabricated and the devices´ characteristics are reported. Before contact patterning, ZnO films were annealed in high vacuum environment under lower temperatures compared with in forming gas treatments. The characteristics of the ZnO-TFTs which have been annealed, especially at 300°C, have significant enhancement compared with those have not been annealed. The on/off current ratio is more than 103 and the off current is less than 2×10-8A at VDS=40V.
Keywords :
II-VI semiconductors; annealing; thin film transistors; wide band gap semiconductors; zinc compounds; I-V performance enhancements; ZnO; annealing; bottom gate TFT; contact patterning; forming gas treatments; thin film transistors; vacuum treatments; Annealing; Films; Logic gates; Scanning electron microscopy; Temperature; Thin film transistors; Zinc oxide; I-V Characteristics; RF magnetron sputtering; Thin Film Transistor; Vacuum Annealing; ZnO;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117650
