Title :
High output-power operation of 1.3 μm gain-coupled DFB laser with narrow spectral-linewidth
Author :
Inaba, Yuichi ; Kito, Masahiro ; Ohya, Jun ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
High output-power and narrow spectral-linewidth operation of 1.3 μm gain-coupled distributed feedback (DFB) lasers with InAsP buried absorptive grating are reported. In this report, we have investigated the effect of the thickness of separate-confinement-heterostructure (SCH) layer on the spectral linewidth. As a result, it was clarified that decreasing the thickness of SCH layer is effective to reduce the spectral linewidth. For the fabricated laser, a record high output-power of 230 mW and a minimum spectral-linewidth of 100 kHz was realized
Keywords :
distributed feedback lasers; semiconductor lasers; 1.3 μm gain-coupled DFB laser; 1.3 mum; 230 mW; gain-coupled distributed feedback laser; high output-power operation; narrow spectral-linewidth; separate-confinement-heterostructure; Distributed feedback devices; Epitaxial growth; Gratings; Laser feedback; Optical feedback; Optical films; Optical modulation; Power generation; Quantum well devices; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712795
