Effect of a p-AlInAs electron stopper layer in 1.3 μm AlGaInAs/InP strained multiple quantum well lasers

We have investigated the effect of a p-AlInAs electron stopper layer (ESL) in 1.3-μm AlGaInAs/InP strained multiple quantum well (MQW) lasers. The ESL was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum CW operating temperature T_max was increased by 20°C, and T_max of 210 and 170°C under pulse and CW excitation was achieved, respectively