Title :
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Author :
Qian, L.X. ; Huang, X.D. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La2O3 gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage.
Keywords :
MOS capacitors; fluorine; lanthanum compounds; leakage currents; plasma materials processing; silicon; F-plasma treatment; La2O3; La2O3 gate dielectric; accumulation capacitance; breakdown voltage; capacitance-voltage curve; electrical properties; fluorine; gate leakage current; interface-state density; interfacial layer; silicon MOS capacitor; Annealing; Capacitance-voltage characteristics; Dielectrics; Leakage current; Logic gates; Silicon; Substrates; MOS; fluorine; high-k dielectric; interfacial layer; lanthanum oxide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117657
