• DocumentCode
    2850379
  • Title

    Silicon avalanche diodes as oscillators and power amplifiers in S-band

  • Author

    Assour, J. ; D´Aiello, R.

  • Author_Institution
    RCA Laboratories, Princeton, NJ, USA
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    Abrupt-and linearly-graded junction silicon diodes have been investigated in the high-efficiency mode. S-band and C-band oscillators produced peak powers of 60 W and efficiencies of 16.5%: S-band amplifiers yielded 19-dB gain and 2-W output.
  • Keywords
    Circuit optimization; Diodes; Frequency; High power amplifiers; Laboratories; Oscillators; Power amplifiers; Silicon; Tuning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154880
  • Filename
    1154880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2850379