Title :
The effects of gamma irradiation on GaAs HBT
Author :
Shi, Yang ; Hong-Liang, Lu ; Yu-Ming, Zhang ; Yi-Men, Zhang ; Jin-Can, Zhang ; Hai-Peng, Zhang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
The effects of gamma irradiation on Gallium-Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is reported. DC and Radio Frequency (RF) performance are investigated for gamma doses up to 7 Mrad(Si). After 7Mrad(Si) gamma irradiation, an increase of base current (lb) is observed, the change is thought to be mainly due to the reduction of the effective minority carrier lifetime (τ) in the n-type emitter. Besides, the cutoff frequency (fT) decreases, which is caused by the decrease of the electron mobility (μn) in the base and the collector-base space charge region.
Keywords :
III-V semiconductors; carrier lifetime; electron mobility; gallium arsenide; heterojunction bipolar transistors; minority carriers; radiation effects; space charge; DC performance; GaAs; RF performance; base current; collector-base space charge region; electron mobility; gamma irradiation effect; heterojunction bipolar transistor; minority carrier lifetime reduction; n-type emitter; radiofrequency performance; Current measurement; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Radiation effects; Semiconductor device measurement; Temperature measurement; GaAs HBT; gamma irradiation; radiation effects;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117663
