The effects of gamma irradiation on GaAs HBT

Author

Shi, Yang ; Hong-Liang, Lu ; Yu-Ming, Zhang ; Yi-Men, Zhang ; Jin-Can, Zhang ; Hai-Peng, Zhang

Author_Institution

Key Lab. of Wide Band-Gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The effects of gamma irradiation on Gallium-Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is reported. DC and Radio Frequency (RF) performance are investigated for gamma doses up to 7 Mrad(Si). After 7Mrad(Si) gamma irradiation, an increase of base current (l_b) is observed, the change is thought to be mainly due to the reduction of the effective minority carrier lifetime (τ) in the n-type emitter. Besides, the cutoff frequency (f_T) decreases, which is caused by the decrease of the electron mobility (μ_n) in the base and the collector-base space charge region.

Keywords

III-V semiconductors; carrier lifetime; electron mobility; gallium arsenide; heterojunction bipolar transistors; minority carriers; radiation effects; space charge; DC performance; GaAs; RF performance; base current; collector-base space charge region; electron mobility; gamma irradiation effect; heterojunction bipolar transistor; minority carrier lifetime reduction; n-type emitter; radiofrequency performance; Current measurement; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Radiation effects; Semiconductor device measurement; Temperature measurement; GaAs HBT; gamma irradiation; radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117663

Filename

6117663