Title :
A new type of 4H-SiC epitaxial channel IEMOSFET
Author :
Tang, Xiaoyan ; Zhang, Chao ; Zhang, Yuming ; Zhang, Yimen ; Yang, Fei
Author_Institution :
Key Lab. of Wide Band-Gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
A new type of n-channel 4H-SiC IEMOSFET is proposed in which channel film on top of the p-well is formed by the third epitaxial growth. In the epitaxial Channel IEMOSFET, the surface roughness induced by implantation and activation annealing processes is avoided. The epitaxial channel and the implanted channel IEMOSFET are compared via simulations using 2-D simulator ISE. The simulated results indicate that the new IEMOSFET offers reduction of specific on-resistance as well as maintaining a high VBR.
Keywords :
MOSFET; annealing; epitaxial growth; surface roughness; 2D simulator ISE; SiC; VBR; activation annealing process; channel film; epitaxial channel IEMOSFET; epitaxial growth; implantation; n-channel 4H-SiC IEMOSFET; p-well; surface roughness; Epitaxial growth; JFETs; Logic gates; MOSFET circuits; Rough surfaces; Surface roughness; Surface treatment; IEMOSFET; Silicon Carbide; channel mobility; epitaxial;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117677
