Calculations of electrical characteristics of resonant tunneling structures

Author

Dragunov, V.P. ; Boldyrev, D.V.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

1998

fDate

1998

Firstpage

442

Lastpage

446

Abstract

Since Tsu and Esaki (1973) first proposed the resonant tunneling diode (RTD), RTDs have been widely investigated both, theoretically and experimentally, because of their physical properties and potential for high-speed device applications. Resonant tunneling is a strictly quantum phenomenon in which charged carriers tunnel between the two electrodes of a double-barrier heterostructure through the quantized quasibound state of a potential well. In this report, we have performed numerical calculations of the current-voltage characteristics for the case of a GaAs-AlAs RTD under hydrostatic pressure. Our calculation is based on the envelope-function approximation

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; gallium arsenide; quantum well devices; resonant tunnelling diodes; semiconductor device models; GaAs-AlAs; Poisson equation; Schrodinger equation; current-voltage characteristics; double-barrier heterostructure; electron space charge; energy band profiles; envelope-function approximation; hydrostatic pressure; model; potential well; quantized quasibound state; quantum well; resonant tunneling diode; resonant tunneling structures; transfer matrix formalism; Boundary conditions; Diodes; Electric variables; Electrodes; Electrons; Gallium arsenide; Poisson equations; Quantum wells; Resonant tunneling devices; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.769011

Filename

769011