DocumentCode :
28509
Title :
InAs/AlSb quantum cascade lasers operating near 20 μm
Author :
Bahriz, M. ; Lollia, G. ; Laffaille, P. ; Baranov, A.N. ; Teissier, R.
Author_Institution :
Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Volume :
49
Issue :
19
fYear :
2013
fDate :
Sept. 12 2013
Firstpage :
1238
Lastpage :
1240
Abstract :
InAs-based quantum cascade lasers (QCLs) operating near 20 μm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm2 at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.
Keywords :
aluminium compounds; current density; indium compounds; laser modes; optical fabrication; quantum cascade lasers; waveguide lasers; InAs; InAs-AlSb; QCL; double metal waveguide; host InAs substrate; laser active region; pulsed mode operation; quantum cascade lasers; spectral region; temperature 170 K; temperature 80 K; threshold current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.2412
Filename :
6612803
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=28509
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