• DocumentCode
    28509
  • Title

    InAs/AlSb quantum cascade lasers operating near 20 μm

  • Author

    Bahriz, M. ; Lollia, G. ; Laffaille, P. ; Baranov, A.N. ; Teissier, R.

  • Author_Institution
    Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
  • Volume
    49
  • Issue
    19
  • fYear
    2013
  • fDate
    Sept. 12 2013
  • Firstpage
    1238
  • Lastpage
    1240
  • Abstract
    InAs-based quantum cascade lasers (QCLs) operating near 20 μm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm2 at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.
  • Keywords
    aluminium compounds; current density; indium compounds; laser modes; optical fabrication; quantum cascade lasers; waveguide lasers; InAs; InAs-AlSb; QCL; double metal waveguide; host InAs substrate; laser active region; pulsed mode operation; quantum cascade lasers; spectral region; temperature 170 K; temperature 80 K; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.2412
  • Filename
    6612803
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=28509