Title :
The influence of the input capacitor on the ESD behavior
Author :
Wei, Shouming ; Qian, Qinsong ; Sun, Weifeng ; Zhu, Jing ; Liu, Siyang
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
The Electrostatic discharge (ESD) capabilities of the gate-ground NMOS devices in the circuits with and without input capacitance are experimentally compared in this paper. The experimental results show that the input capacitor can reduce the ESD robustness, which has been explained in detail by using two-dimensional simulator. At last, a novel design is also proposed to improve the ESD protection behavior of the CMOS integrated circuits with the input capacitor. The proposed design is validated by using two-dimensional simulations and experimental analysis.
Keywords :
CMOS integrated circuits; capacitance; capacitors; circuit simulation; electrostatic discharge; CMOS integrated circuit; ESD behavior; ESD capability; ESD protection behavior; ESD robustness; capacitance; electrostatic discharge; gate-ground NMOS device; input capacitor; two-dimensional simulator; Capacitors; Electrostatic discharges; Logic gates; Robustness; Stress; Substrates; Transistors; Electro-static discharge; improved structure; input capacitor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117689
